gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 1 / 6 version 1. 1 product features application s ? gan on sic hemt ? in/out 50 ? impedance matching ? surface mount hybrid type ? small size & weight ? high efficiency ? low cost ? custom design available ? radio system ? trs(trunked radio system) ? rf sub - systems ? base s tation description the power amplifier module is designed for tetra (terrestrial trunked radio, formerly known as trans european trunked radio) applications. tetra networks are already operational in all the traditional pmr market segments, suc h as pu blic safety, transportation, utilities, government, pamr, commercial & industry and oil & gas. gan hemt technolog y is used and attached on a copper sub carrier. it is connected by using bias and in/out matching circuit method with gold wir e bonding. elec trical specification s @ v ds = 28 v, v gs @i dq , t a =25 p arameter u nit min typ max condition frequency range mhz 100 - 1000 z s = zl = 50 ohm power gain @p1db db 12 15 - vds = +28v vgs @i dq idq = 5ma pout @ p 1db db m 36 38 - efficiency @ p1db % 40 55 - ids @ p1db ma - 475 700 pout @ p 3db dbm 38.5 40 - input return loss db - - 10 - 5 vds= +28v, idq=150ma supply v oltage v v gs @i dq =1ma v gs @i dq v gs @i dq =5 ma v g s - 2 8 - v d s caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage n ote tg series have internal dc blocking capacitors at the rf input and output ports package type : np - 18
gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 2 / 6 version 1. 1 mechanical specifications parameter u nit t yp remark mass g 1 - dimension mm 15 x 1 0 x 5 .4 outermost absolute maximum ratings parameter u nit r ating s ymbol gate - source voltage v - 10 ~ 0 vgs drain - source voltage v 50 v ds gate current m a 3.6 i g op erating junction temperature c 225 t j operating case temperature c - 4 0 ~ 85 t c storage temperature c - 40 ~ 10 0 t stg load mismatch 5:1 (all load phase) operating v oltages parameter u nit m in t yp m ax s ymbol drain voltage v - +28 - v ds gate volta ge (on - st at e) v - v gs @i dq - 2 v gs gate voltage (off - sta t e) v - - 8 - v gs block diagram +vds - vgs input matching circuit out put matching circuit input output
gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 3 / 6 version 1. 1 p erformance charts * bias condition @ idq = 5ma, v gs @i dq , vds =+ 28 v, ta=25 ids vs. frequency (@p1db) efficiency vs. frequency (@p1d b) power gain vs. frequency (@p1db) pin vs. frequency (@p1db) p3db & gain vs. frequency ids & efficiency vs. frequency (@ p3db)
gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 4 / 6 version 1. 1 package dimensions (type: np - 18 ) * u nit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 rf input 3 gate bias ( - v gs ) 5 gnd 7 gnd 2 gnd 4 drain bias (+v ds ) 6 rf output 8 gnd recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove h eat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounti ng screws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal thermal performance.
gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 5 / 6 version 1. 1 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive volt age bias. these biases ar e applied in accordance to the sequence during turn - on and turn - off. the pallet amplifier does not have a built - in bias sequence c ircuit. therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn - on 1. connect gnd. 2. app ly vgs . 3. apply vds . 4. apply the rf power. during turn - off 1. turn off rf power. 2. turn off vds , and then, turn off the vgs . 3. remove all connections. turn on - sequence timing diagram -
gan hybrid power amplifier tg100 0 - 10 korea n facilities : 82 - 31 - 250 - 5078 / rfsales@rfhic.com all specifications may change without notice us facilities : 919 - 6 77 - 8780 / sales@rfhicusa.com 6 / 6 version 1. 1 reflow p rofile * reflow oven settings zone a b c d e f temperature( c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * measured reflow profile ordering information part number package d esign tg100 0 - 10 - r (reel) - b (bulk) - evb (evaluation board) revision history part number release date version modification data sheet status tg1000 - 10 2014.06.26 1.1 ? a mass of mechanical specification is changed. - tg1000 - 10 2012.01.18 1.0 ? t his is formally released. ? a format is changed at parameters of specification. ? performance graphs of p3db are added to chart part. - tg1000 - 10 2012.01.08 0.93 ? parameters of s pecifications are changed . preliminary rfhic corporation reserves the r ight to make changes to any products herein or to discontinue any product at any time without notice . while product specifica tions have been thoroughly examined for reliability, rfhic corporation strongly recommends buyers to verify that the information th ey are using is accurate before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, inc luding without limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction o f the product can be expected to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold rfhic corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorize d use. sales, inquiries and support shoul d be directed to the local authorized geographic distributor for rfhic corporation. for customers in the us, please contact t he us sales team at 919 - 6 77 - 8780 . for all other inquiries, please contact the international sales team at 82 - 31 - 250 - 5078.
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